Characterization of the Oxide-Semiconductor Interface in NO, P, and N-Plasma Passivated 4H-SiC/SiO$_\sf{2}$ Structures Using TEM

Name: Characterization of the Oxide-Semiconductor Interface in NO, P, and N-Plasma Passivated 4H-SiC/SiO$_\sf{2}$ Structures Using TEM
Start: 2013-06-26T00:00:00Z
Location: South Bend, IN

Project Slides

Date

Jun 26, 2013

Event

55^th Electronic Materials Conference

Location

South Bend, IN

Joshua Taillon

Materials Data Scientist

A materials research scientist at NIST interested in scientific data curation, AI for materials research, and baking bread.