Characterization of the oxide-semiconductor transition layer in NO, P, and N-plasma passivated 4H-SiC/SiO$_\sf{2}$ structures using transmission electron microscopy

Name: Characterization of the oxide-semiconductor transition layer in NO, P, and N-plasma passivated 4H-SiC/SiO$_\sf{2}$ structures using transmission electron microscopy
Start: 2013-03-18T00:00:00Z
Location: Baltimore, MD

Project Slides

Date

Mar 18, 2013

Event

2013 March American Physical Society Meeting

Location

Baltimore, MD

Joshua Taillon

Materials Data Scientist

A materials research scientist at NIST interested in scientific data curation, AI for materials research, and baking bread.