Characterization of the Oxide-Semiconductor Interface in NO, P, and N-plasma Passivated 4H-SiC/SiO$_\sf{2}$ Structures Using TEM and XPS

Name: Characterization of the Oxide-Semiconductor Interface in NO, P, and N-plasma Passivated 4H-SiC/SiO$_\sf{2}$ Structures Using TEM and XPS
Start: 2013-12-04T00:00:00Z
Location: Boston, MA

Project Slides

Date

Dec 4, 2013

Event

2013 Fall Materials Research Society Meeting

Location

Boston, MA

Joshua Taillon

Materials Data Scientist

A materials research scientist at NIST interested in scientific data curation, AI for materials research, and baking bread.