Systematic Characterization of the SiC/SiO$_\sf{2}$ Transition Layer in NO-Annealed MOSFETs

Name: Systematic Characterization of the SiC/SiO$_\sf{2}$ Transition Layer in NO-Annealed MOSFETs
Start: 2012-11-29T00:00:00Z
Location: Boston, MA

Project Slides

Date

Nov 29, 2012

Event

2012 Fall Materials Research Society Meeting

Location

Boston, MA

Joshua Taillon

Materials Data Scientist

A materials research scientist at NIST interested in scientific data curation, AI for materials research, and baking bread.